Field-free magnetization reversal by spin-Hall effect and exchange bias

Article

Future information storage technology may exploit electrical currents to write the states of ferromagnetic nanoelements via spin torque effects. Here, the authors demonstrate such behaviour promoted by exchange bias from an interfaced antiferromagnet, which may help overcome practical device limitations.

Nature Communications doi: 10.1038/ncomms10854

Authors: A. van den Brink, G. Vermijs, A. Solignac, J. Koo, J. T. Kohlhepp, H. J. M. Swagten, B. Koopmans

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