Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

A WSe₂-based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10⁷ at 180 K (3 × 10⁴ at room temperature). This originates from trap-assisted tunneling process involving WSe₂ defect states aligned near the graphene Dirac point.

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from #Med Blogs by Alexandros G.Sfakianakis via Alexandros G.Sfakianakis on Inoreader http://ift.tt/21OfEx2
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