Σφακιανάκης Αλέξανδρος
ΩτοΡινοΛαρυγγολόγος
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Κρήτη 72100
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00306932607174
alsfakia@gmail.com

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Τετάρτη 17 Μαΐου 2017

Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation

Publication date: 1 October 2017
Source:Journal of Colloid and Interface Science, Volume 503
Author(s): Ying Peng Xie, Yongqiang Yang, Guosheng Wang, Gang Liu
The solid-state Z-scheme trinary/binary heterostructures show the advantage of utilizing the high-energy photogenerated charge carriers in photocatalysis. However, the key factors controlling such Z-scheme in the binary heterostructures are still unclear. In this paper, we showed that oxygen vacancies could act as an interface electron transfer mediator to promote the direct Z-scheme charge transfer process in binary semiconductor heterostructures of CdS/ZnS. Increasing the concentration of surface oxygen vacancies of ZnO crystal can greatly enhance photocatalytic hydrogen generation of CdS/ZnO heterostructure. This was attributed to the strengthened direct Z-scheme charge transfer process in CdS/ZnO, as evidenced by steady-state/time-resolved photoluminescence spectroscopy and selective photodeposition of metal particles on the heterostructure.

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