Synaptic plasticity and learning behavior in transparent tungsten oxide-based memristors

Publication date: 5 September 2017
Source:Materials & Design, Volume 129
Author(s): Bo Qu, Haiwei Du, Tao Wan, Xi Lin, Adnan Younis, Dewei Chu
In this study, by introducing reflex process into the precursor preparation and inkjet printing for high-quality top electrode deposition, we produced a solution-processed tungsten oxide based memristor, which not only overcomes the technical challenges in previous reports but also leads to an important step toward the development of high-performance memristor at low cost and ambient pressure. Various characteristics of synaptic plasticity and learning behaviors have been effectively demonstrated in the stacked device of Ag/WO3/FTO including short-term plasticity (STP) and long-term plasticity (LTP). A detailed investigation of short-term plasticity to long-term plasticity transition was given by changing the pulse number and strength. The memristive behavior in this work can be attributed to the formation/dissolution of Ag percolation paths between two electrodes. With regard to these promising features, the developed memristor may have great potential applications for bio-inspired neuromorphic devices.

Graphical abstract

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