Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Publication date: 15 January 2018
Source:Journal of Magnetism and Magnetic Materials, Volume 446
Author(s): Z.A. Yunusov, Sh. U. Yuldashev, Y.H. Kwon, D.Y. Kim, S.J. Lee, H.C. Jeon, H. Jung, A. Kim, T.W. Kang
In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn1−xMnxO1−ySy thin films with manganese x=0.05 and sulfur 0≤y≤0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.



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