Publication date: 5 July 2018
Source:Materials & Design, Volume 149
Author(s): Yunyi Wu, Siu Wing Or
(Na0.85K0.15)0.5Bi0.5TiO3 (NKBT) multilayer thin films with different thicknesses of 100–700nm, corresponding to 2–14 layers with each layer of ~50nm thickness, are synthesized on Pt(111)/Ti/SiO2/Si substrates to form Pt/NKBT/Pt/Ti/SiO2/Si heterostructures using different spin-coating and annealing conditions in a modified aqueous sol-gel process. The multilayer thin films spin-coated by two steps (step 1/2) at 600/4000rpm for 6/30s and annealed at 700°C for 5min with a heating rate of 30°C/s show a dense, uniform, and continuous morphology as well as a pure perovskite structure with a rhombohedral–tetragonal phase transition at ~140°C and no preferential orientation in the heterostructures. Their structural and electromechanical properties exhibit consistent improvement trends with increasing thickness from 100 to 550nm (i.e., 2–11 layers). The 550nm-thick, 11-layer films demonstrate the best ferroelectric, dielectric, piezoelectric, and electric performance in terms of the highest remnant polarization, saturation polarization, dielectric constant, and effective piezoelectric constant of 18.3μC/cm2, 53.6μC/cm2, 463, and 64pm/V, as well as the lowest coercive field, dielectric loss tangent, and leakage current density of 116kV/cm, 0.057, and 27μA/cm2, respectively. The observed thickness-dependent improvement is explained by an interfacial passive layer effect where the motion of both 180° and non-180° domain walls is enhanced in the thicker multilayer thin films by weakening the influence of domain pinning in the interfacial passive layers between the multilayer thin films and the substrates.
Graphical abstract
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