Article
Synthesis of single-crystal complex-oxide films directly on silicon is difficult due to differing interfacial chemistry. Here, the authors demonstrate room-temperature integration of single-crystal lead zirconate titanate on to silicon to act as a gate insulator in a field-effect transistor.
Nature Communications doi: 10.1038/ncomms10547
Authors: Saidur Rahman Bakaul, Claudy Rayan Serrao, Michelle Lee, Chun Wing Yeung, Asis Sarker, Shang-Lin Hsu, Ajay Kumar Yadav, Liv Dedon, Long You, Asif Islam Khan, James David Clarkson, Chenming Hu, Ramamoorthy Ramesh, Sayeef Salahuddin
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