Publication date: 5 March 2018
Source:Journal of Alloys and Compounds, Volume 736
Author(s): M.M. Shehata, T.G. Abdel-Malik, K. Abdelhady
A p-Silicon/Zn-tetra pyridyl-porphyrin (ZnTPyP) heterojunction was fabricated by forming a ZnTPyP layer on a p-type Si single crystal substrate using a conventional thermal evaporation technique. Complex impedance measurements of the Al/p-Si/ZnTPyP/Au heterojunction were carried out at applied AC-voltage range from 0.2 V to 1 V, temperature range from 303 K to 353 K and over the frequency range from 100HZ to 2 MHz. Impedance spectra of the heterojunction under the standard illumination ranged from 0 to 40 mW/cm2 were reported and analysed.
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